HYM72V1625GS-50- Datasheet, PDF (2/11 Pages) Siemens Semiconductor Group – 16M x 72-Bit EDO-DRAM Module

HYM72V1625/35GS-50/-60
16M x 72-ECC EDO-Module
The HYM 72V1625/35GS-50/-60 is a 128 MByte DRAM module organized as 16 777 216 words by
72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3164405AT/AJ
16M × 4 EDO-DRAMs in 400 mil wide TSOPII or SOJ- packages mounted together with ceramic
decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using
BiCMOS buffers/line drivers.
Each HYB 3164405AT/AJ is described in the data sheet and is fully electrically tested and
processed according to Siemens standard quality procedure prior to module assembly. After
assembly onto the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
Ordering Information
Type
HYM 72V1625GS-50
HYM 72V1625GS-60
HYM 72V1635GS-50
HYM 72V1635GS-60
Ordering Code
Package
L-DIM-168-9
L-DIM-168-9
L-DIM-168-9
L-DIM-168-9
Descriptions
3.3V 50ns EDO-DRAM module
3.3V 60ns EDO-DRAM module
3.3V 50ns EDO-DRAM module
3.3V 60ns EDO-DRAM module
Pin Names
A0-A11,B0
DQ0 - DQ71
RAS0, RAS2
CAS0 , CAS4
WE0, WE2
OE0, OE2
Vcc
Vss
PD1 - PD8
PDE
ID0 , ID1
N.C.
Address Input
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Output Enable
Power (+3.3 Volt)
Ground
Presence Detect Pins
Presence Detect Enable
ID indentification bit
No Connection
Presence-Detect and ID-pin Truth Table:
Module
ID0 ID1 PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8
HYM 72V1625/35GS-50 Vss Vss 1
1
1
1
1
0
0
0
HYM 72V1625/35GS-60 Vss Vss 1
1
1
1
1
1
1
0
Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high
level all PD terminal are in tri-state.
Semiconductor Group
2