HYM721000GS-60- Datasheet, PDF (2/11 Pages) Siemens Semiconductor Group – 1M x 72-Bit Dynamic RAM Module

HYM721000/10GS-60/-70
1M x 72 ECC- Module
The HYM 721000GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 72-bit in
a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 514400BT 1M × 4
DRAMs in 300 mil wide TSOPII - packages mounted together with eighteen 0.2 µF ceramic
decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four
BiCMOS 8-bit buffers/line drivers.
Each HYB 514400BT is described in the data sheet and is fully electrically tested and processed
according to Siemens standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
Ordering Information
Type
HYM 721000GS-60
HYM 721000GS-70
HYM 721010GS-60
HYM 721010GS-70
Ordering Code
Q67100-Q2004
on request
on request
on request
Package
L-DIM-168-2
L-DIM-168-2
L-DIM-168-2
L-DIM-168-2
Descriptions
60ns DRAM module
70ns DRAM module
60ns DRAM module
70ns DRAM module
Pin Names
A0-A9,B0
DQ0 - DQ71
RAS0, RAS2
CAS0 , CAS2
WE0, WE2
OE0, OE2
Vcc
Vss
PD1 - PD8
PDE
ID0 , ID1
N.C.
Address Input
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Output Enable
Power (+5 Volt)
Ground
Presence Detect Pins
Presence Detect Enable
ID indentification bit
No Connection
Presence-Detect and ID-pin Truth Table:
Module
ID0 ID1 PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8
HYM 721000/10GS-60 Vss Vss 0
0
1
0
0
1
1
0
HYM 721000/10GS-70 Vss Vss 0
0
1
0
0
0
1
0
Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high
level all PD terminal are in tri-state.
Semiconductor Group
2