HYB3164405BJ Datasheet, PDF (2/29 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB3164(5)405BJ/BT(L)-40/-50/-60
16M x 4-DRAM
This HYB3164(5)405B is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is
fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. The
HYB3164(5)405B operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL
or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400B to be packaged in a
400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit
densities and are compatible with commonly used automatic testing and insertion equipment.The
HYB3164(5)405BTL parts have a very low power „sleep mode“supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164405BJ-40
HYB 3164405BJ-50
HYB 3164405BJ-60
HYB 3164405BT-40
HYB 3164405BT-50
HYB 3164405BT-60
HYB 3164405BTL-50
HYB 3164405BTL-60
4k-refresh versions:
HYB 3165405BJ-40
HYB 3165405BJ-50
HYB 3165405BJ-60
HYB 3165405BT-40
HYB 3165405BT-50
HYB 3165405BT-60
HYB 3165405BTL-50
HYB 3165405BTL-60
Ordering
Code
Package
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
Descriptions
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
Semiconductor Group
2