FP412L100 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Differential Magneto Resistor

FP 412 L 100
The differential magneto resistor FP 412 L 100 is a magnetically variable resistor in L-
type InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is
supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of
each of the magneto resistors is 100 Ω. The series coupled MRs are actuated by an
external magnetic field or can be biased by a permanent magnet and actuated by a soft
iron target.
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation¹⁾
Supply voltage²⁾ (B = 0.2 T)
Thermal conductivity
–attached to heatsink
–in still air
Characteristics (T_A = 25 °C)
Basic resistance
(I ≤ 1 mA, B = 0 T)³⁾
Center symmetry⁴⁾
Relative resistance change
R₀ = R_01-3, at B = 0 T
B = ± 0.3 T
B=±1T
Temperature coefficient
B=0T
B = ± 0.3 T
B=±1T
Symbol
T_A
T_stg
P_tot
V_IN
G_{th case}
G_{th A}
Value
– 40 / + 175
– 40 / + 185
1000
10
≥ 20
2
Unit
°C
°C
mW
V
mW/K
R_01-3
M
R_B/R₀
TC_R
150…250
Ω
≤ 10
%
> 1.7
–
>7
– 0.16
%/K
– 0.38
%/K
– 0.54
%/K
1) Corresponding to diagram P_tot = f(T_case)
2)
3)
Corresponding
1 T = 1 Tesla =
to diagram
10⁴ Gauss
V_IN
=
f(T_case)
4)
M
=
R_{----0--1---–---2---–-----}R_{---0--2---–----3}
R_{01 – 2}
× 100% for R_01-2 > R_02-3
Semiconductor Group
2