FP412D250 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Differential Magneto Resistor

FP 412 D 250
The differential magneto resistor FP 412 D 250 is a magnetically variable resistor in D-
type InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is
supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of
each of the magneto resistors is 250 Ω. The series coupled MRs are actuated by an
external magnetic field or can be biased by a permanent magnet and actuated by a soft
iron target.
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation¹⁾
Supply voltage²⁾(B = 0.2 T)
Thermal conductivity
–attached to heatsink
–in still air
Characteristics (T_A = 25 °C)
Basic resistance
(I ≤ 1 mA, B = 0 T)
Center symmetry³⁾
Relative resistance change
(R₀ = R_01-3, R_04-6 at B = 0 T)
B = ± 0.3 T⁴⁾
B=±1T
Temperature coefficient
B=0T
B = ± 0.3 T
B=±1T
Symbol
T_A
T_stg
P_tot
V_IN
G_{th case}
G_{th A}
Value
Unit
– 40 / +175 °C
– 40 / +185 °C
1000
mW
12
V
≥ 25
mW/K
1
mW/K
R_01-3
M
R_B/R₀
TC_R
370…630
Ω
≤ 10
%
> 2.8
–
> 12
–
– 1.8
%/K
– 2.7
%/K
– 2.9
%/K
1) Corresponding to diagram P_tot = f(T_case)
2) Corresponding to diagram V_IN = f(T_case)
3)
M
=
R_{----0--1---–---2---–-----}R_{---0--2---–----3×}
R_{01 – 2}
100%
for
R_01-2
>
R_02-3
4) 1 T = 1 Tesla = 10⁴ Gauss
Semiconductor Group
2