|
FP212L100-22 Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – Differential Magnetoresistive Sensor | |||
|
◁ |
FP 212 L 100-22
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation1)
Supply voltage2)
Insulation voltage between
terminals and magnet
Thermal conductivity
(when soldered)
Symbol
TA
Tstg
Ptot
VIN
VI
GthA
Value
Unit
â 40 / + 140 °C
â 40 / + 150 °C
450
mW
10
V
> 60
V
â¥5
mW/K
Characteristics (TA = 25 °C)
Nominal supply voltage
Total resistance, (δ = â, I ⤠1 mA)
Center symmetry3) (δ = â)
Offset voltage4)
(at VIN N and δ = â)
Open circuit output voltage5)
(VIN N and δ = 0.2 mm)
Cut-off frequency
VIN N
R1-3
M
V0
Vout pp
fc
5
V
220â¦400
â¦
⤠10
%
⤠130
mV
> 1000
mV
> 20
kHz
Measuring arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage VOUT.
1) Corresponding to diagram Ptot = f(TA)
2) Corresponding to diagram VIN = f(TA)
3)
M = -R---1---âR---21---â-â---2-R---2---â----3 Ã 100% for R1-2 > R2-3
4) Corresponding to measuring circuit in Fig. 2
5) Corresponding to measuring circuit in Fig. 2 and arrangement as shown in Fig. 1
Semiconductor Group
2
|
▷ |