FP212D250-22 Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – Differential Magnetoresistive Sensor

FP 212 D 250-22
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation¹⁾
Supply voltage²⁾
Insulation voltage between
terminals and magnet
Thermal conductivity
(when soldered)
Symbol
T_A
T_stg
P_tot
V_IN
V_I
G_thA
Value
Unit
– 40/ + 140 °C
– 40/ + 150 °C
450
mW
10
V
> 60
V
≥5
mW/K
Characteristics (T_A = 25 °C)
Nominal supply voltage
Total resistance, (δ = ∞, I ≤ 1 mA)
air gap (δ = ∞)
Center symmetry³⁾ (δ = ∞)
Offset voltage⁴⁾
(at V_{IN N} and δ = ∞)
Open circuit output voltage⁵⁾
(at V_{IN N} and δ = 0.2 mm)
Cut-off frequency
V_{IN N}
R_1-3
M
V₀
V_{out pp}
f_c
5
V
1000…1600 Ω
≤ 10
%
≤ 130
mV
> 1100
mV
> 20
kHz
Measuring arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage V_OUT.
1) Corresponding to diagram P_tot = f(T_A)
2) Corresponding to diagram V_IN = f(T_A)
3)
M
=
-^R---¹---^–---²---–-----^R---²---^–----³
R_{1 – 2}
×
100%
for
R_1-2
>
R_2-3
4) Corresponding to measuring circuit in Fig. 2
5) Corresponding to measuring circuit in Fig. 2 and arrangement as shown in Fig. 1
Semiconductor Group
2