CMY91 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication)

GaAs MMIC
CMY 91
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Electrical characteristics at TA = 25°C / VD = 3 V unless otherwise specified
Characteristics of 900MHz test and application circuit (see page app. circuit)
Parameters
Symbol min
typ
max Unit
Drain-source breakdown voltage
V_(BR)
IIF = 500 µA
VLO-GND = 0 V
IF-GND
8
-
-
V
VRF-GND = 4 V CAP-pin not connected
Drain current
VRF-GND = 0 V VLO-GND = 0 V
I_D
0.8
1
1.4
mA
VIF-GND = 3 V CAP-pin not connected
Conversion gain
fRF = 920 MHz fLO = 965 MHz
fIF = 45 MHz
PLO = -3 dBm
Single sideband noise figure
G_C
-
5.5
-
dB
fRF = 920 MHz fLO = 965 MHz
fIF = 45 MHz
PLO = -3 dBm
F_SSB
-
9
-
dB
3rd order intermodulation
fRF = 920 MHz fLO = 965 MHz
fIF = 45 MHz
PLO = -3 dBm
LO/RF isolation
f = 965 MHz
IP3
-
-2
-
dBm
Iso_LO/RF
-
11
-
dB
T_A = 25°C / V_D = 3 V; CAP-pin connected to ground by 680Ω resistor
Parameters
Symbol min
typ
max
Drain current
VRF-GND = 0 V VLO-GND = 0 V
VIF-GND = 3 V
Conversion gain
fRF = 920 MHz fLO = 965 MHz
fIF = 45 MHz
PLO = -3 dBm
Single sideband noise figure
fRF = 920 MHz fLO = 965 MHz
fIF = 45 MHz
PLO = -3 dBm
3rd order intermodulation
fRF = 920 MHz fLO = 965 MHz
fIF = 45 MHz
PLO = -3 dBm
LO/RF isolation
f = 965 MHz
I_D
-
2.5
-
G_C
-
9.5
-
F_SSB
-
8.0
IP3
-
0
-
Iso_LO/RF
-
11
-
Not used ports were terminated by 50 Ω.
Please make sure that LO-signal is clean of noise and spurious at f = f_LO +/- f_IF
Unit
mA
dB
dB
dBm
dB
Siemens Aktiengesellschaft
pg. 2/9
16.12.96
HL EH PD21