CLY15 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET
CLY 15
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Electrical characteristics (T_A = 25°C , unless otherwise specified)
Characteristics
Symbol min
typ
max
Drain-source saturation current *)
I_DSS
2.4
3.2
4.8
V_DS = 3V
V_GS = 0V
Cut-off current
I_D
-
-
400
V_DS = 3V
V_GS = -3.8V
Gate cut-off current
I_G
-
20
70
V_DS = 3V
V_GS = -3.8V
Pinch-off Voltage
VGS(p) -3.8
-2.8
-1.8
VDS=3V ID=400µA
Small Signal Gain *)
G
V_DS = 3V I_D = 1.4A
f = 1.8GHz
-
6
-
Pin = 5dBm
Output Power *)
P_o
32
32.5
-
V_DS = 3V I_D = 1.4A
f = 1.8GHz
Pin = 29dBm
Output Power *)
P_o
34.5
35
-
V_DS = 5V I_D = 1.4A
f = 1.8GHz
Pin = 30 dBm
1dB-Compression Point *)
P_1dB
-
31.5
-
V_DS = 3V
I_D = 1.4A f = 1.8GHz
1dB-Compression Point *)
P_1dB
-
34.5
-
V_DS = 5V
I_D = 1.4A f = 1.8GHz
Power Added Efficiency *)
η_D
45
50
-
VDS = 3V
ID = 1.4A f = 1.8GHz
Pin = 29dBm
*) pulsed measurement; duty cycle 1:10; ton = 1ms, power matching conditions.
Unit
A
µA
µA
V
dB
dBm
dBm
dBm
dBm
%
Siemens Aktiengesellschaft
pg. 2/7
09/96
HL EH PD 21