CGY60 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)

GaAs MMIC
CGY 60
________________________________________________________________________________________________________
Electrical characteristics of CGY60 in GSM application circuit
T_A = 25°C
f=950MHz
unless otherwise specified
RS = RL = 50 Ω
Characteristics
Drain current
Power Gain
Ud = 3V
Ud = 5V
Noise figure
Ud = 3V
Ud = 5V
Input return loss
Ud = 3V
Ud = 5V
Output return loss
Ud = 3V
Ud = 5V
Third order input intercept point
two-tone intermodulation test
f1 = 950MHz, f2 = 951MHz
Pin = -20dBm (both carriers)
Ud = 3V
Ud = 5V
Input power at
1dB gain compression
Ud = 3V
Ud = 5V
Symbol min
typ
max Unit
I_D
mA
-
6
9
G
dB
-
15.5
-
-
17
-
F
dB
-
1.35
-
-
1.30
-
RL_in
dB
-
10
-
-
10
-
RL_out
dB
-
11
-
-
11
-
IP₃
dBm
-
-3
-
-
-1
-
P-1_dB
dBm
-
-10
-
-
-8
-
Siemens Aktiengesellschaft
pg. 2/7
12.01.96
HL EH PD 21