CGY52 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation)

GaAs MMIC
CGY 52
________________________________________________________________________________________________________
Electrical characteristics
T_A = 25°C
V_D = 4.5 V
unless otherwise specified
RS = RL = 50Ω
Characteristics
Drain current
Power Gain
f = 200 MHz
f = 900 MHz
f = 1800 MHz
Gain flatness
f = 200 MHz to 1800 MHz
Noise figure
f = 900 MHz to 1800 MHz
Input return loss
f = 200 MHz to 300 MHz
f = 300 MHz to 1800 MHz
f = 200 MHz
f = 900 MHz
f = 1800 MHz
Output return loss
f = 200 MHz to 1800 MHz
f = 200 MHz
f = 900 MHz
f = 1800 MHz
Third order input intercept point
two-tone intermodulation test
f1 = 806 MHz, f2 = 810 MHz
P₌ = 10 dBm (both carriers)
1dB gain compression
f = 200 MHz to 1800 MHz
Symbol min
typ
max Unit
I_D
-
160
220
mA
G
13
14
-
dB
14.5 15.5
-
12.5 13.5
-
∆G
-
3
4
dB
F
-
4.8
-
dB
RL_in
6.5
7.5
-
dB
7.5
8.5
-
-
7.5
-
-
12.5
-
-
9
-
RL_out
9.5
10.5
-
dB
-
10.5
-
-
12.5
-
-
11.5
-
IP₃
-
32
-
dBm
P-1_dB
-
19
-
dBm
Siemens Aktiengesellschaft
pg. 2/4
12.02.96
HL EH PD 21