CFY35 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)

GaAs FET
CFY 35
________________________________________________________________________________________________________
Electrical characteristics at T_A = 25°C, unless otherwise specified
Characteristics
Symbol min
typ
max Unit
Drain-source saturation current
V = 2.5 V, V = 0 V
DS
GS
I
mA
DSS
10
25
45
Pinch-off voltage
V = 2.5 V I = 1 mA
DS
D
V
V
GS(P)
-0.2
-1.2
-2.5
Transconductance
V = 2.5 V I = 10 mA
DS
D
g
mS
m
20
30
-
Gate leakage current
V = 2.5 V I = 10 mA
DS
D
I
µA
G
-
0.1
2
Noise figure
F
V = 2.5 V I = 10 mA
DS
D
f = 12 GHz
CFY 35-20
CFY 35-23
dB
-
1.9
2.0
-
2.2
2.3
Associated gain
G
a
V = 2.5 V I = 10 mA
DS
D
f = 12 GHz
dB
8
8.5
-
Typical Common Source Noise Parameters
I = 10 mA
D
V = 2.5 V
DS
Z = 50 Ω
0
f F_min G_a
Γ_opt
R_n r_n
N
GHz dB dB MAG ANG Ω −
-
2 0.60 17.6 0.82 32 35 0.7 0.08
4 0.83 14.2 0.73 65 25 0.5 0.11
6 1.10 11.8 0.65 105 14 0.28 0.14
8 1.38 10.5 0.60 146 5.5 0.11 0.19
10 1.64 9.4 0.58 -177 3 0.06 0.22
12 1.90 8.5 0.61 -139 10 0.2 0.28
14 2.15 7.9 0.62 -110 26 0.52 0.33
F_50Ω
dB
2.35
2.30
2.35
2.55
2.80
3.50
3.95
G(F_{50 Ω})
dB
12.9
11.2
9.5
7.8
6.5
4.9
3.8
Siemens Aktiengesellschaft
pg. 2/4
13.02.1996
HL EH PD 21