BXY44K Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon PIN Diode (Microwave attenuator diode Linear RF characteristic)

BXY 44K
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
IR = 10 µA
Forward voltage
IR = 100 mA
Reverse current
VR = 100 V
Storage time
IF = 10 mA, VR = 10 V
Diode capacitance
VR = 50 V, f = 1 MHz
Case capacitance
Charge carrier life time
IF = 10 mA, IR = 6 mA
Forward resistance
f = 100 MHz, IF = 10 µA
f = 100 MHz, IF = 1 mA
f = 100 MHz, IF = 10 mA
Symbol
min.
V(BR)
200
Values
typ. max.
–
–
Unit
V
VF
–
–
1
IR
–
–
10 nA
ts
–
50 –
ns
CT
–
–
0.4 pF
CC
–
0.1 –
τL
–
0.5 –
µs
rf
Ω
–
1000 –
–
25 –
–
3.5 –
Semiconductor Group
2