BXY43P Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)

BXY 43P
Electrical Characteristics
Table 2
DC Characteristics at T_A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min. typ.
max.
Reverse current 1
V_R1 = 150 V
Reverse current 2
V_R2 = 100 V
Forward voltage
I_F = 100 mA
I_R1
-
-
100
I_R2
-
-
10
V_F
-
0.97 1
Unit
nA
nA
V
Table 3
AC Characteristics at T_A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min. typ.
max.
Total capacitance
C_T
V_R = 50 V, f = 1 MHz
Forward resistance
R_F1
f = 100 MHz, I_F1 = 20 mA
Forward resistance
R_F2
f = 100 MHz, I_F2 = 1 mA
Forward resistance
R_F3
f = 100 MHz, I_F3 = 10 mA
Minority carrier lifetime
t_L
I_F = 10 mA, I_R = 6 mA, I_R = 3 mA
0.4
0.6
0.85
-
55
70
-
2.2
3.0
-
0.9
1.5
250
650
-
Unit
pF
W
W
W
ns
Table 4
Matching Requirements at T_A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
Difference in forward resistance 2 ¹⁾ R_F2
Difference in forward resistance 3 ¹⁾ R_F3
min. typ.
-
-
-
-
max.
15
%
15
%
1) _{DRF [%] = 100 ´ (RF_Diode2 - RF_Diode1)/RF_Diode1}
Semiconductor Group
2
Draft A02 1998-04-01