BXY42BA-7 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon PIN Diode (Fast switching)

BXY 42BA-7
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Breakdown voltage
V(BR)
IR = 10 µA
Reverse current
IR
VR = 40 V
Storage time
ts
IF = 10 mA, VR = 10 V
Diode capacitance
CT
VR = 20 V, f= 1 MHz
Charge carrier life time
τL
IF = 10 mA, IR = 6 mA
Forward resistance
rf
f = 100 MHz, IF = 10 mA
min.
50
–
–
–
–
–
Values
Unit
typ.
max.
–
–
V
–
5
nA
4
–
ns
–
0.2
pF
40
–
ns
1.5
–
Ω