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BUZ21L Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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BUZ 21 L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 10.5 A
V(BR)DSS
100
VGS(th)
1.2
IDSS
-
-
IGSS
-
RDS(on)
-
V
-
-
1.6
0.1
10
10
0.075
2
µA
1
100
nA
100
Ω
0.085
Semiconductor Group
2
01/97
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