BUZ104S Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)

Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, junction - case
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
BUZ 104 S
SPP14N05
Symbol
T_j
T_stg
R_thJC
R_thJA
Values
Unit
-55 ... + 175 °C
-55 ... + 175
≤ 4.3
K/W
≤ 62
55 / 175 / 56
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V_GS = 0 V, I_D = 0.25 mA, T_j = 25 °C
Gate threshold voltage
V_GS=V_DS, I_D = 20 µA
Zero gate voltage drain current
V_DS = 50 V, V_GS = 0 V, T_j = -40 °C
V_DS = 50 V, V_GS = 0 V, T_j = 25 °C
V_DS = 50 V, V_GS = 0 V, T_j = 150 °C
Gate-source leakage current
V_GS = 20 V, V_DS = 0 V
Drain-Source on-resistance
V_GS = 10 V, I_D = 9.6 A
V_(BR)DSS
55
V_GS(th)
2.1
I_DSS
-
-
-
I_GSS
-
R_DS(on)
-
V
-
-
3
4
µA
-
0.1
0.1
1
-
100
nA
10
100
Ω
0.076
0.1
Semiconductor Group
2
29/Jan/1998