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BUZ104 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
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BUZ 104
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID, Tj = -40 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 12.5 A
Symbol
min.
Values
Unit
typ.
max.
V(BR)DSS
50
VGS(th)
2.1
IDSS
-
-
-
IGSS
-
RDS(on)
-
V
-
-
3
4
0.1
1
µA
1
100
nA
10
100
µA
nA
10
100
Ω
0.07
0.1
Semiconductor Group
2
07/96
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