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BTS121A Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
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BTS 121A
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
Gate threshold voltage
VGS = VDS, ID = 1 mA
Zero gate voltage drain current
VGS = 0 V, VDS = 100
Tj = 25 °C
Tj = 125 °C
Gate-source leakage current
VGS = ± 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
Drain-source on-state resistance
VGS = 4.5 V, ID = 9.5 A
V(BR)DSS
VGS(th)
I DSS
I GSS
RDS(on)
100
1.5
–
–
–
–
–
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × R , DS(on)max ID = 9.5 A
gfs
8
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Ciss
–
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Coss
–
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Crss
–
Turn-on time ton, (ton = td(on) + tr)
td(on)
–
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω t r
–
Turn-off time toff, (toff = td(off) + tf)
td(off)
–
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω t f
–
Values
Unit
typ.
max.
V
–
–
2.0
2.5
µA
0.1
1.0
10
100
10
100
nA
2
4
µA
Ω
0.085 0.1
S
14
–
pF
1200 1500
320
580
160
260
25
40
ns
110
170
210
270
100
130
Semiconductor Group
2
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