BTS110 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

BTS 110
Electrical Characteristics
at T_j = 25 °C, unless otherwise specified.
Parameter
Static Characteristics
Drain-source breakdown voltage
V_GS = 0, I_D = 1 mA
Gate threshold voltage
V_GS = V_DS, I_D = 1 mA
Zero gate voltage drain current
V_GS = 0 V, V_DS = 100 V
T_j = 25 °C
T_j = 125 °C
Gate-source leakage current
V_GS = 20 V, V_DS = 0
T_j = 25 °C
T_j = 150 °C
Drain-source on-state resistance
V_GS = 10 V, I_D = 5 A
Dynamic Characteristics
Forward transconductance
V_DS ≥ 2 × I_D × R , _DS(on)max I_D = 5 A
Input capacitance
V_GS = 0, V_DS = 25 V, f = 1 MHz
Output capacitance
V_GS = 0, V_DS = 25 V, f = 1 MHz
Reverse transfer capacitance
V_GS = 0, V_DS = 25 V, f = 1 MHz
Turn-on time t_on, (t_on = t_d(on) + t_r)
V_CC = 30 V, V_GS = 10 V, I_D = 2.9 A,
R_GS = 50 Ω
Turn-off time t_off, (t_off = t_d(off) + t_f)
V_CC = 30 V, V_GS = 10 V, I_D = 2.9 A,
R_GS = 50 Ω
Symbol
min.
V_(BR)DSS
V_GS(th)
I _DSS
I _GSS
R_DS(on)
100
2.5
–
–
–
–
–
g_fs
2.7
C_iss
–
C_oss
–
C_rss
–
t_d(on)
–
t_r
–
t_d(off)
–
t_f
–
Values
Unit
typ.
max.
V
–
–
3.0
3.5
µA
1
10
100
300
10
100
nA
2.0
4.0
µA
Ω
0.17
0.2
S
3.8
8.0
pF
450
600
150
240
80
130
20
30
ns
45
70
70
90
55
70
Semiconductor Group
2