BFQ76 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.)

BFQ 76
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 14 mA, VCE = 10 V
AC Characteristics
Transition frequency
IC = 14 mA, VCE = 10 V, f = 500 MHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Noise figure
IC = 5 mA, VCE = 6 V, f = 10 MHz, ZS = 75 ^Ω
IC = 4 mA, VCE = 10 V, f = 800 MHz, ZS = ZSopt
Power gain
IC = 14 mA, VCE = 10 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 15
–
–
V
ICB0
–
–
50 nA
IEB0
–
–
10
µA
hFE
20
50
–
–
fT
–
Ccb
–
Cibo
–
Cobs
–
F
–
–
Gpe
–
5
–
0.55 –
1.2 –
0.9 –
1.8 –
2.5 –
17 –
GHz
pF
dB