BFQ75 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.)

BFQ 75
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 30 mA, VCE = 5 V
V(BR)CE0 12
–
–
V
ICB0
–
–
50 nA
IEB0
–
–
10
µA
hFE
20
50
–
–
AC Characteristics
Transition frequency
IC = 30 mA, VCE = 5 V, f = 500 MHz
fT
–
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
–
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
–
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
–
Noise figure
F
IC = 10 mA, VCE = 8 V, f = 10 MHz, ZS = 50 Ω
–
IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω
–
Power gain
IC = 30 mA, VCE = 8 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Gpe
–
5
–
0.75 –
1.6 –
1.1 –
2.2 –
3
–
14 –
GHz
pF
dB