BFQ72 Datasheet, PDF (2/14 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)

BFQ 72
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 25 mA, VCE = 5 V
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage
IC = 50 mA, IB = 5 mA
Base-emitter voltage
IC = 25 mA, VCE = 5 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 15
ICES
–
ICB0
–
IEB0
–
hFE
40
40
VCEsat
–
VBE
–
–
–
V
–
10
µA
–
50 nA
–
10
µA
–
90 200
–
–
0.15 0.4 V
0.78 –