BFP22 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage)

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BFP 25
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
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Collector-base breakdown voltage
IC = 100 µA
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Emitter-base breakdown voltage
IE = 100 µA
Collector-base cutoff current
VCB = 160 V
VCB = 250 V
VCB = 160 V, TA = 150 ˚C
VCB = 250 V, TA = 150 ˚C
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BFP 25
BFP 22
BFP 25
Emitter-base cutoff current
VEB = 4 V
DC current gain
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V¹⁾
IC = 30 mA, VCE = 10 V¹⁾
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Collector-emitter saturation voltage¹⁾
IC = 20 mA, IB = 2 mA
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Base-emitter saturation voltage¹⁾
IC = 20 A, IB = 2 mA
AC characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 20 MHz
Output capacitance
VCB = 30 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
200 –
300 –
V(BR)CB0
200 –
300 –
V(BR)EB0
6
–
ICB0
–
–
–
–
–
–
–
–
IEB0
–
–
hFE
25
–
40
–
50
–
40
–
VCEsat
–
–
–
–
VBEsat
–
–
V
–
–
–
–
–
100 nA
100 nA
20
µA
20
µA
100 nA
–
–
–
–
–
V
0.4
0.5
0.9
fT
–
Cobo
–
70 –
1.5 –
MHz
pF
1) _{Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.}