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BFN24 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) | |||
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Electrical Characteristics
at TA = 25 ËC, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
BFN 24
BFN 26
Collector-base breakdown voltage
IC = 100 µA
BFN 24
BFN 26
Emitter-base breakdown voltage
IE = 100 µA
Collector-base cutoff current
VCB = 200 V
VCB = 250 V
VCB = 200 V, TA = 150 ËC
VCB = 250 V, TA = 150 ËC
BFN 24
BFN 26
BFN 24
BFN 26
Emitter-base cutoff current
VEB = 3 V
DC current gain
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V1)
IC = 30 mA, VCE = 10 V1)
BFN 24
BFN 26
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
BFN 24
BFN 26
Base-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
AC characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 20 MHz
Output capacitance
VCB = 30 V, f = 1 MHz
BFN 24
BFN 26
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
250 â
300 â
V(BR)CB0
250 â
300 â
V(BR)EB0 5
â
ICB0
â
â
â
â
â
â
â
â
IEB0
â
â
hFE
25
â
40
â
40
â
30
â
VCEsat
â
â
â
â
VBEsat
â
â
V
â
â
â
â
â
100 nA
100 nA
20
µA
20
µA
100 nA
â
â
â
â
â
V
0.4
0.5
0.9
fT
â
Cobo
â
70 â
1.5 â
MHz
pF
1) Pulse test conditions: t ⤠300 µs, D = 2 %.
Semiconductor Group
2
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