BF996S Datasheet, PDF (2/8 Pages) NXP Semiconductors – N-channel dual-gate MOS-FET

BF 996 S
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, – VG1S = – VG2S = 4 V
Gate 1 source breakdown voltage
± IG1S = 10 mA, VG2S = VDS = 0
Gate 2 source breakdown voltage
± IG2S = 10 mA, VG1S = VDS = 0
Gate 1 source leakage current
± VG1S = 5 V, VG2S = VDS = 0
Gate 2 source leakage current
± VG2S = 5 V, VG1S = VDS = 0
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V
Gate 1 source pinch-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 µA
Gate 2 source pinch-off voltage
VDS = 15 V, VG1S = 0, ID = 20 µA
Symbol
Values
Unit
min. typ. max.
V(BR) DS
20
–
V ± (BR) G1SS 8.5
–
V ± (BR) G2SS 8.5
–
± IG1SS
–
–
± IG2SS
–
–
IDSS
2
–
– VG1S (p)
–
–
– VG2S (p)
–
–
–
V
14
14
50 nA
50
20 mA
2.5 V
2.0
Semiconductor Group
2