BF1005S Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

BF 1005S
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
I_D = 650 µA, -V_G1S = 4 V, - V_G2S = 4 V
Gate 1 source breakdown voltage
±I_G1S = 10 mA, V_G2S = V_DS = 0
Gate 2 source breakdown voltage
±I_G2S = 10 mA, V_G1S = 0 V, V_DS = 0 V
Gate 1 source current
V_G1S = 6 V, V_G2S = 0 V
Gate 2 source leakage current
±V_G2S = 8 V, V_G1S = 0 V, V_DS = 0 V
Drain current
V_DS = 5 V, V_G1S = 0 , V_G2S = 4.5 V
Operating current (selfbiased)
V_DS = 5 V, V_G2S = 4.5 V
Gate 2-source pinch-off voltage
V_DS = 5 V, I_D = 100 µA
V_(BR)DS
12
-
-V
±V_(BR)G1SS ⁸
-
12
±V_(BR)G2SS 8
-
13
+I_G1SS
- 100 - µA
±I_G2SS
-
-
50 nA
I_DSS
-
- 800 µA
I_DSO
-
13
- mA
V_G2S(p)
-
1
-V
AC characteristics
Forward transconductance (self biased)
V_DS = 5 V, V_G2S = 4.5 V, f = 1 kHz
Gate 1-input capacitance (self biased)
V_DS = 5 V, V_G2S = 4 V, f = 1 MHz
Output capacitance (self biased)
V_DS = 5 V, V_G2S = 4 V, f = 100 MHz
Power gain (self biased)
V_DS = 5 V, V_G2S = 4 V, f = 800 MHz
Noise figure (self biased)
V_DS = 5 V, V_G2S = 4 V, f = 800 MHz
Gain control range (self biased)
V_DS = 5 V, V_G2S = 1 V, f = 800 MHz
g_fs
C_g1ss
C_dss
G_ps
F₈₀₀
∆G_ps
-
30
- mS
-
2.4 2.7 pF
-
1.3
-
-
19
- dB
-
1.6
-
40 50
-
SSeemmicioconndduuctcotor ^rGGrorouupp
2²
Au ₁-2₉₉5₈-1_-19₁9_-08₁