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BDP952 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
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BDP 952
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 mA, BDP 952
IC = 10 mA, IB = 0 mA, BDP 954
IC = 10 mA, IB = 0 mA, BDP 956
Collector-base breakdown voltage
IC = 100 µA, IB = 0 , BDP 952
IC = 100 µA, IB = 0 , BDP 954
IC = 100 µA, IB = 0 , BDP 956
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 100 V, IE = 0 , TA = 25 °C
VCB = 100 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 2 A, VCE = 2 V
Collector-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
V(BR)CEO
80
100
120
V(BR)CBO
100
120
140
V(BR)EBO
5
ICBO
-
-
IEBO
-
hFE
25
40
15
VCEsat
-
VBEsat
-
fT
-
Ccb
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
40
max.
-
-
-
-
-
-
-
100
20
100
-
475
-
0.8
1.5
-
-
Unit
V
nA
µA
nA
-
V
MHz
pF
Semiconductor Group
2
Nov-28-1996
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