BDP948 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)

BDP 948
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO
I_C = 10 mA, I_B = 0 mA, BDP 948
45
-
I_C = 10 mA, I_B = 0 mA, BDP 950
60
-
Collector-base breakdown voltage
V_(BR)CBO
I_C = 100 µA, I_B = 0 , BDP 948
45
-
I_C = 100 µA, I_B = 0 , BDP 950
60
-
Base-emitter breakdown voltage
V_(BR)EBO
I_E = 10 µA, I_C = 0
5
-
Collector cutoff current
I_CBO
V_CB = 45 V, I_E = 0 , T_A = 25 °C
-
-
V_CB = 45 V, I_E = 0 , T_A = 150 °C
-
-
Emitter cutoff current
I_EBO
V_EB = 4 V, I_C = 0
-
-
DC current gain
h_FE
I_C = 10 mA, V_CE = 5 V
25
-
I_C = 500 mA, V_CE = 1 V
85
-
I_C = 1 A, V_CE = 2 V
50
-
Collector-emitter saturation voltage 1) V_CEsat
I_C = 2 A, I_B = 0.2 A
-
-
Base-emitter saturation voltage 1)
V_BEsat
I_C = 2 A, I_B = 0.2 A
-
-
AC Characteristics
Transition frequency
f_T
I_C = 50 mA, V_CE = 10 V, f = 100 MHz
-
100
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
-
40
1) Pulse test: t < 300µs; D < 2%
max.
-
-
-
-
-
100
20
100
-
475
-
0.5
1.3
-
-
Unit
V
nA
µA
nA
-
V
MHz
pF
Semiconductor Group
2
Nov-28-1996