|
BCV26 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP Darlington transistors | |||
|
◁ |
BCV 26
BCV 46
Electrical Characteristics
at TA = 25 ËC, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BCV 26
BCV 46
Collector-base breakdown voltage
IC = 100 µA
BCV 26
BCV 46
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 30 V
VCB = 60 V
VCB = 30 V, TA = 150 ËC
VCB = 60 V, TA = 150 ËC
BCV 26
BCV 46
BCV 26
BCV 46
Emitter cutoff current, VEB = 4 V
DC current gain1)
IC = 100 µA, VCE = 1 V
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
IC = 0.5 A, VCE = 5 V
BCV 26
BCV 46
BCV 26
BCV 46
BCV 26
BCV 46
BCV 26
BCV 46
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
V(BR)CE0
30
â
60
â
V(BR)CB0
V(BR)EB0
ICB0
IEB0
hFE
VCEsat
40
â
80
â
10
â
â
â
â
â
â
â
â
â
â
â
4000 â
2000 â
10000 â
4000 â
20000 â
10000 â
4000 â
2000 â
â
â
VBEsat
â
â
V
â
â
â
â
â
100 nA
100 nA
10
µA
10
µA
100 nA
â
â
â
â
â
â
â
â
â
1
V
1.5
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
fT
â
Cobo
â
200 â
4.5 â
MHz
pF
1) Pulse test: t ⤠300 µs, D = 2 %.
Semiconductor Group
2
|
▷ |