BCR519 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR 519
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_B = 0
Base-emitter breakdown voltage
I_E = 10 µA, I_C = 0
Collector cutoff current
V_CB = 40 V, I_E = 0
DC current gain
I_C = 50 mA, V_CE = 5 V
Collector-emitter saturation voltage 1)
I_C = 50 mA, I_B = 2.5 mA
Input off voltage
I_C = 100 µA, V_CE = 5 V
Input on Voltage
I_C = 10 mA, V_CE = 0.3 V
Input resistor
V_(BR)CEO
50
V_(BR)CBO
50
V_(BR)EBO
5
I_CBO
-
h_FE
120
V_CEsat
-
V_i(off)
0.4
V_i(on)
0.5
R₁
3.2
AC Characteristics
Transition frequency
f_T
I_C = 50 mA, V_CE = 5 V, f = 100 MHz
-
1) Pulse test: t < 300µs; D < 2%
-
-
-
-
-
-
-
-
4.7
100
-
-
-
100
630
0.3
0.8
1.5
6.2
-
V
nA
-
mV
V
kΩ
MHz
Semiconductor Group
2
Dec-18-1996