BCR119 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR 119
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO
I_C = 100 µA, I_B = 0
50
-
Collector-base breakdown voltage
V_(BR)CBO
I_C = 10 µA, I_B = 0
50
-
Base-emitter breakdown voltage
V_(BR)EBO
I_E = 10 µA, I_C = 0
5
-
Collector cutoff current
I_CBO
V_CB = 40 V, I_E = 0
-
-
DC current gain
h_FE
I_C = 5 mA, V_CE = 5 V
120
-
Collector-emitter saturation voltage 1) V_CEsat
I_C = 10 mA, I_B = 0.5 mA
-
-
Input off voltage
V_i(off)
I_C = 100 µA, V_CE = 5 V
0.4
-
Input on Voltage
V_i(on)
I_C = 2 mA, V_CE = 0.3 V
0.5
-
Input resistor
R₁
3.2
4.7
V
-
-
-
nA
100
-
630
V
0.3
0.8
1.1
6.2
kΩ
AC Characteristics
Transition frequency
f_T
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
-
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
-
1) Pulse test: t < 300µs; D < 2%
150
-
3
-
MHz
pF
Semiconductor Group
2
Dec-05-1996