BCR10PN Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)

BCR 10PN
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_B = 0
Collector cutoff current
V_CB = 40 V, I_E = 0
Emitter cutoff current
V_EB = 10 V, I_C = 0
DC current gain
I_C = 5 mA, V_CE = 5 V
Collector-emitter saturation voltage 1)
I_C = 10 mA, I_B = 0.5 mA
Input off voltage
I_C = 100 µA, V_CE = 5 V
Input on Voltage
I_C = 2 mA, V_CE = 0.3 V
Input resistor
Resistor ratio
AC Characteristics for NPN Type
Transition frequency
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
V_(BR)CEO
50
V_(BR)CBO
50
I_CBO
-
I_EBO
-
h_FE
30
V_CEsat
-
V_i(off)
0.8
V_i(on)
1
R₁
7
R₁/R₂
0.9
f_T
-
C_cb
-
-
-
-
-
-
-
-
-
10
1
130
3
max.
-
-
100
0.75
-
0.3
1.5
2.5
13
1.1
-
-
Unit
V
nA
mA
-
V
kΩ
-
MHz
pF
Semiconductor Group
2
Nov-26-1996