BCP71M Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)

BCP 71M
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 10 mA, I_B = 0
V_(BR)CEO 32
-
-V
Collector-base breakdown voltage
I_C = 100 µA, I_B = 0
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector cutoff current
V_CB = 8 V, I_E = 0
Collector cutoff current
V_CB = 8 V, I_E = 0 , T_A = 150 °C
Emitter cutoff current
V_EB = 4 V, I_C = 0
DC current gain 1)
I_C = 10 mA, V_CE = 5 V
I_C = 500 mA, V_CE = 1 V
I_C = 2 A, V_CE = 2 V
V_(BR)CBO ³²
V_(BR)EBO ⁵
I_CBO
-
I_CBO
-
I_EBO
-
h_FE
25
85
50
-
-
-
-
- 100 nA
-
20 µA
- 100 nA
-
-
-
- 475
-
-
Collector-emitter saturation voltage1)
I_C = 2 A, I_B = 0.2 A
V_CEsat
- 0.18 - V
Base-emitter saturation voltage 1)
I_C = 2 A, I_B = 0.2 A
V_BEsat
-
-
1.2 V
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 10 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
- 100 - MHz
C_cb
-
80
- pF
1) Pulse test: t < 300µs; D < 2%
SSeemmicicoonndduucctotor ^rGGrorouupp
2²
Au ₁-1₉₉2₈-1_-19₁9_-08₁