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BCP69 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP medium power transistor | |||
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BCP 69
Electrical Characteristics
at TA = 25 ËC, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IB = 0
Collector-base cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ËC
Emitter-base cutoff current
VEB = 5 V, IC = 0
DC current gain1)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 1 V
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
Base-emitter voltage1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
AC characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 20
â
â
V
V(BR)CES 25
â
â
V(BR)CB0 25
â
â
V(BR)EB0 5
â
â
ICB0
â
â
100 nA
â
â
100 µA
IEB0
â
â
100 nA
hFE
VCEsat
â
50 â
â
85 â
375
85 100 160
100 160 250
160 250 375
60 â
â
â
â
0.5 V
VBE
â
0.6 â
â
â
1
fT
â
100 â
MHz
1) Pulse test conditions: t ⤠300 µs, D = 2 %.
Semiconductor Group
2
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