BCP68 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN medium power transistor

BCP 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IB = 0
Collector-base cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
Emitter-base cutoff current
VEB = 5 V, IC = 0
DC current gain¹⁾
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 1 V
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
Collector-emitter saturation voltage¹⁾
IC = 1 A, IB = 100 mA
Base-emitter voltage¹⁾
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
AC characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 20
–
–
V
V(BR)CES 25
–
–
V(BR)CB0 25
–
–
V(BR)EB0 5
–
–
ICB0
–
–
100 nA
–
–
100 µA
IEB0
–
–
100 nA
hFE
VCEsat
–
50
–
–
85
–
375
85
100 160
100 160 250
160 250 375
60
–
–
–
–
0.5 V
VBE
–
0.6 –
–
–
1
fT
–
100 –
MHz
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2