BC847S Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

BC 847S
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
min.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
I_C = 10 mA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_B = 0
Collector-emitter breakdown voltage
I_C = 10 µA, V_BE = 0
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector cutoff current
V_CB = 30 V, I_E = 0
Collector cutoff current
V_(BR)CEO 45
V_(BR)CBO 50
V_(BR)CES 50
V_(BR)EBO 6
I_CBO
-
I_CBO
-
V_CB = 30 V, I_E = 0 , T_A = 150 °C
DC current gain 1)
I_C = 10 µA, V_CE = 5 V
I_C = 2 mA, V_CE = 5 V
Collector-emitter saturation voltage1)
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base-emitter saturation voltage 1)
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base-emitter voltage 1)
I_C = 2 mA, V_CE = 5 V
I_C = 10 mA, V_CE = 5 V
h_FE
-
200
V_CEsat
-
-
V_BEsat
-
-
V_BE(ON)
580
-
Values
typ.
-
-
-
-
-
-
250
290
90
200
700
900
660
-
max.
-
-
-
-
15
5
-
630
250
650
-
-
700
770
Unit
V
nA
µA
-
mV
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
May-12-1998