BC847PN Datasheet, PDF(2/6 Page) Siemens Semiconductor Group – NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

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BC847PN Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

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BC 847PN

Electrical Characteristics at TA=25Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics per Transistor

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CEO 45

-V

Collector-base breakdown voltage

IC = 10 ÂµA, IB = 0

Collector-emitter breakdown voltage

IC = 10 ÂµA, VBE = 0

V(BR)CBO 50

V(BR)CES 50

Emitter-base breakdown voltage

IE = 10 ÂµA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 30 V, IE = 0

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 Â°C

DC current gain 1)

IC = 10 ÂµA, VCE = 5 V

IC = 2 mA, VCE = 5 V

ICBO

hFE

15 nA

5 ÂµA

250

200 290 630

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

90 300

200 650

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

700

900

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

580 660 750

820

1) Pulse test: t < 300Âµs; D < 2%

Semiconductor Group

May-12-1998

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