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| BBY56-03W Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) | |||
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BBY 56-03W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
IR
-
-
1 nA
IR
-
- 100 µA
AC characteristics
Diode capacitance
VR = 0.32 V, f = 1 MHz
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 2.38 V, f = 1 MHz
VR = 3 , f = 1 MHz
CT
pF
59
-
67
39
-
43
22
- 27.2
19.4 - 23.7
15.9 -
19
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
VR = 1 V, f = 330 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
CT1/CT3
-
2.45
--
rs
-
0.3
-â¦
CC
- 0.09 - pF
Ls
-
0.6
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Au 1-19948-1-1919-081
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