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BBY55-03W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
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BBY 55-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 15 V
Reverse current
VR = 15 V, TA = 65 °C
IR
-
-
3 nA
IR
-
- 100
AC characteristics
Diode capacitance
VR = 2 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 10 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 10 V, f = 1 MHz
Series resistance
VR = 5 V, f = 470 MHz
Case capacitance
f = 1 MHz
CT
14
10
5.5
CT2/CT10 2
pF
15 16
11 12
6
6.5
2.5 3 -
rs
- 0.15 0.35 Ω
CC
- 0.09 - pF
Series inductance
Ls
-
0.6
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Apr1-39098-1-1919-081
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