 English |
|
|
|
|
|
|
|
| BBY53 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) | |||
| |||
| ◁ |
BBY 53
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
VR = 4 V, TA = 25 °C
VR = 4 V, TA = 65 °C
IR
-
-
-
-
nA
10
200
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
CT
pF
4.8
5.3
5.8
1.85
2.4
3.1
CT1/CT3
-
1.8
2.2
2.6
rs
-
â¦
0.37 -
CC
-
pF
0.12 -
Ls
-
2
-
nH
Semiconductor Group
2
Feb-04-1997
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese