BBY52-03W Datasheet, PDF(2/3 Page) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)

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BBY52-03W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)

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BBY 52-03W

Electrical Characteristics at TA=25Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Reverse current

VR = 6 V, TA = 25 Â°C

VR = 6 V, TA = 65 Â°C

200

AC characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 3 V, f = 1 MHz

VR = 4 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 4 V, f = 1 MHz

Series resistance

VR = 1 V, f = 1 GHz

Case capacitance

f = 1 MHz

Series inductance chip to ground

1.4

0.85

CT1/CT4

1.1

1.85

2.2

1.5

1.35 -

1.15

1.45

1.6

2.1

â¦

0.9

1.8

0.12 -

1.8

Semiconductor Group

Feb-04-1997

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