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| BBY52-02W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance) | |||
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BBY 52-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 6 V
Reverse current
VR = 6 V, TA = 65 °C
IR
-
-
10 nA
IR
-
- 100
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
CT
pF
1.4 1.85 2.2
0.95 1.5
2
0.9 1.35 1.75
0.85 1.15 1.45
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
CT1/CT4 1.1 1.6 2.1 -
rs
-
0.9 1.7 â¦
CC
- 0.09 - pF
Series inductance chip to ground
Ls
-
0.6
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Jul1-92938--11919-081
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