BBY51 Datasheet, PDF(2/3 Page) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)

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BBY51 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)

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BBY 51

Electrical Characteristics at TA=25Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Reverse current

VR = 6 V, TA = 25 Â°C

VR = 6 V, TA = 65 Â°C

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 3 V, f = 1 MHz

VR = 4 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 4 V, f = 1 MHz

Capacitance difference

VR = 1 V, VR = 3 V, f = 1 MHz

Capacitance difference

VR = 3 V, VR = 4 V, f = 1 MHz

Series resistance

VR = 1 V, f = 1 GHz

Case capacitance

f = 1 MHz

Series inductance chip to ground

200

4.5

5.3

6.1

3.4

4.2

5.2

2.7

3.5

4.6

2.5

3.1

3.7

CT1/CT4

1.55

1.75

2.2

C1V-C3V

1.4

1.78

2.2

C3V-C4V

0.3

0.5

0.7

â¦

0.37 -

0.12 -

Semiconductor Group

Jan-09-1997

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