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BBY51-07 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
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BBY 51-07
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics per diode
Reverse current
VR = 6 V, TA = 25 °C
VR = 6 V, TA = 65 °C
AC characteristics per diode
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Capacitance difference
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance difference
VR = 3 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
IR
-
-
-
-
nA
10
200
CT
4.8
3.6
2.9
2.6
CT1/CT4
1.55
C1V-C3V
1.4
C3V-C4V
0.3
rs
-
CC
-
Ls
-
pF
5.3
6
4.2
5
3.5
4.2
3.1
3.5
-
1.75
2.15
pF
1.78
2.2
0.5
0.7
Ω
0.37 -
pF
0.12 -
2
-
nH
Semiconductor Group
2
Jan-08-1997
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