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| BBY51-02W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) | |||
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BBY 51-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 6 V
Reverse current
VR = 6 V, TA = 65 °C
IR
-
-
10 nA
IR
-
- 100
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
CT
pF
4.5 5.3 6.1
3.4 4.2 5.2
2.7 3.5 4.6
2.5 3.1 3.7
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Capacitance difference
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance difference
VR = 3 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
CT1/CT4 1.55 1.75 2.2 -
C1V-C3V 1.4 1.78 2.2 pF
C3V-C4V 0.3 0.5 0.7
rs
- 0.37 - â¦
CC
- 0.09 - pF
Series inductance chip to ground
Ls
-
0.6
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Jul1-92938--11919-081
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