BBY35F Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 … 12 V)

BBY 35 F
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
IR = 10 µA
Reverse current
VR = 20 V
Diode capacitance
VR1 = 4 V, f = 1 MHz
VR2 = 20 V, f = 1 MHz
Capacitance ratio
VR1 = 4 V, VR2 = 20 V
Figure of merit
VR = 4 V, f = 50 MHz
Symbol
min.
V(BR)
22
Values
typ. max.
–
–
Unit
V
IR
–
–
10 nA
CT
pF
8.5 –
10
2.1 –
2.4
CT4
3.5 –
–
–
CT20
Q
250 350 –
–
Semiconductor Group
2