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| BB857 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance) | |||
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BB 857
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
IR
-
-
10 nA
IR
-
- 200
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
6
-
0.45
Capacitance ratio
VR = 1 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio 1)
VR = 1 V, VR = 28 V, f = 1 MHz
CT1/CT25 -
CT1/CT28 9.7
âCT/CT
-
Series resistance
VR = 5 V, f = 470 MHz
Series inductance
rs
-
Ls
-
1) In-line matching. For details please refer to Application Note 047
6.6
0.55
0.54
12
12.2
-
1.5
0.6
pF
7.2
-
0.65
--
-
5%
-â¦
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Mar1-29978--11919-081
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