 English |
|
|
|
|
|
|
|
| BB837 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) | |||
| |||
| ◁ |
BB 837
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Reverse current
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
IR
-
IR
-
Values
typ.
-
-
max.
10
200
Unit
nA
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
pF
6
6.6 7.2
- 0.55
-
0.45 0.54 0.65
Capacitance ratio
VR = 1 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1V to 28V, f = 1 MHz
Capacitance matching
VR = 1V to 28V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz
Series inductance
CT1/CT25
-
12
CT1/CT28 9.7 12.2
âCT/CT
-
-
rs
-
1.5
Ls
-
1.4
-
--
5%
-â¦
- nH
Semiconductor Group
2
Mar-27-1998
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese