BB835 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units)

BB 835
Electrical Characteristics
at T_A = 25 °C, unless otherwise specified.
Parameter
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, 28 V, f = 1 MHz
Capacitance matching
V_R = 1…28 V, f = 1 MHz
Series resistance
V_R = 1 V, f = 470 MHz
Series inductance
Diode capacitance C_T = f (V_R)
f = 1 MHz.
Symbol
Value
Unit
min. typ. max.
I_R
nA
–
–
10
–
–
200
C_T
pF
8.5 9.1 10
0.5 0.62 0.75
C_T1/C_T28
–
13.5 14.7 –
∆C_T/C_T
%
–
–
3
r_S
Ω
–
2.4 –
L_S
–
1.4 –
nH
Semiconductor Group
2